Technical parameters/drain source resistance: 0.6 Ω
Technical parameters/dissipated power: 0.27 W
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/rise time: 25 ns
Technical parameters/rated power (Max): 270 mW
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2.1 mm
External dimensions/width: 1.25 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1917EDH-T1-E3
|
VISHAY | 功能相似 | SC-70-6 |
MOSFET 2P-CH 12V 1A SC70-6
|
||
SI1965DH-T1-E3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
MOSFET 2P-CH 12V 1.3A SC70-6
|
||
SI1965DH-T1-E3
|
Vishay Semiconductor | 功能相似 |
MOSFET 2P-CH 12V 1.3A SC70-6
|
|||
SI1965DH-T1-GE3
|
VISHAY | 类似代替 | SC-70-6 |
MOSFET 12V 1.3A 1.25W 390mohm @ 4.5V
|
||
SI1965DH-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-70-6 |
MOSFET 12V 1.3A 1.25W 390mohm @ 4.5V
|
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