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Model SI1442DH-T1-GE3
Description N Channel MOSFET, 8V to 25V, Vishay Semiconductor # # MOSFET transistor, Vishay Semiconductor
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Brand: Vishay Semiconductor
Packaging SOT-363
Delivery time
Packaging method
Standard packaging quantity 1
0.81  yuan 0.81yuan
10+:
$ 1.0895
50+:
$ 1.0330
100+:
$ 0.9926
300+:
$ 0.9684
500+:
$ 0.9442
1000+:
$ 0.9200
2500+:
$ 0.8837
5000+:
$ 0.8756
Quantity
10+
50+
100+
300+
500+
Price
$1.0895
$1.0330
$0.9926
$0.9684
$0.9442
Price $ 1.0895 $ 1.0330 $ 0.9926 $ 0.9684 $ 0.9442
Start batch production 10+ 50+ 100+ 300+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3741) Minimum order quantity(10)
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Technical parameters/drain source resistance: 0.017 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.8 W

Technical parameters/threshold voltage: 400 mV

Technical parameters/drain source voltage (Vds): 12 V

Technical parameters/Input capacitance (Ciss): 1010pF @6V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.8 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: SOT-363

External dimensions/length: 2.2 mm

External dimensions/width: 1.35 mm

External dimensions/height: 1 mm

External dimensions/packaging: SOT-363

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

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