Technical parameters/drain source resistance: 3.00 Ω
Technical parameters/polarity: N-Channel, P-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 500 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-89
External dimensions/length: 1.7 mm
External dimensions/height: 0.5 mm
External dimensions/packaging: SC-89
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1029X-T1-GE3
|
Vishay Siliconix | 类似代替 | SC-89-6 |
Trans MOSFET N/P-CH 60V 0.305A/0.19A 6Pin SOT-563F T/R
|
||
|
|
Vishay Intertechnology | 类似代替 | SC-89-6 |
Trans MOSFET N/P-CH 60V 0.305A/0.19A 6Pin SOT-563F T/R
|
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