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Model SGW5N60RUFDTM
Description Trans IGBT Chip N-CH 600V 8A 60000mW 3Pin(2+Tab) D2PAK T/R
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Brand: ON Semiconductor
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6933) Minimum order quantity(1)
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Technical parameters/dissipated power: 60000 mW

Technical parameters/breakdown voltage (collector emitter): 600 V

Technical parameters/reverse recovery time: 55 ns

Technical parameters/rated power (Max): 60 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 60000 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards:

Compliant with standards/lead standards: Lead Free

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