Technical parameters/dissipated power: 2.52W (Ta)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 335pF @25V(Vds)
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.52W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT5P10TF
|
Fairchild | 功能相似 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR FQT5P10TF. 场效应管, MOSFET, P沟道, -100V, 1A SOT-223
|
||
FQT5P10TF
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT5P10TF. 场效应管, MOSFET, P沟道, -100V, 1A SOT-223
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review