Technical parameters/drain source resistance: 1.20 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.52W (Ta)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 1A
Technical parameters/Input capacitance (Ciss): 335pF @25V(Vds)
Technical parameters/rated power (Max): 2.52 W
Technical parameters/dissipated power (Max): 2.52W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQT5P10TF
|
Fairchild | 功能相似 | SOT-223-4 |
FAIRCHILD SEMICONDUCTOR FQT5P10TF. 场效应管, MOSFET, P沟道, -100V, 1A SOT-223
|
||
FQT5P10TF
|
ON Semiconductor | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR FQT5P10TF. 场效应管, MOSFET, P沟道, -100V, 1A SOT-223
|
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