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Technical parameters/power supply voltage (DC): 18.0 V
Technical parameters/power supply current: 2.5 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/common mode rejection ratio: 70 dB
Technical parameters/rise time: 130 ps
Technical parameters/Input compensation drift: 0.00 V/K
Technical parameters/bandwidth: 3 MHz
Technical parameters/conversion rate: 1.70 V/μs
Technical parameters/gain bandwidth product: 3 MHz
Technical parameters/input compensation voltage: 500 µV
Technical parameters/input bias current: 150 nA
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/gain bandwidth: 3 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 70 dB
Technical parameters/power supply voltage (Max): 30 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
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