Technical parameters/reverse recovery time: 35 ns
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 125 A
Technical parameters/forward voltage (Max): 1.7 V
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-201AD
External dimensions/length: 9.5 mm
External dimensions/width: 5.6 mm
External dimensions/height: 5.6 mm
External dimensions/packaging: DO-201AD
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5406G
|
Multicomp | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
||
|
|
EIC | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
||
1N5406G
|
Taiwan Semiconductor | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
||
|
|
SynSemi | 类似代替 |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
|||
1N5406G
|
ON Semiconductor | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
||
|
|
DIYI Electronic | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
||
1N5406G
|
Good-Ark Electronics | 类似代替 | DO-201AD |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
||
1N5406G
|
DC Components | 类似代替 |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
|||
|
1N5406G
|
Bytes | 类似代替 |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
|||
|
1N5406G
|
Semtech Corporation | 类似代替 |
TAIWAN SEMICONDUCTOR 1N5406G 标准功率二极管, 单, 600 V, 3 A, 1 V, 200 A
|
|||
|
EGP30J
|
Sunmate | 类似代替 |
DO-201AD 600V 3A 1.7V
|
|||
|
EGP30J
|
Formosa Technology | 类似代替 |
DO-201AD 600V 3A 1.7V
|
|||
|
EGP30J
|
Unspecified | 类似代替 |
DO-201AD 600V 3A 1.7V
|
|||
|
EGP30J
|
Micro Commercial Components | 类似代替 | DO-201AD |
DO-201AD 600V 3A 1.7V
|
||
|
EGP30J
|
Shanghai Lunsure Electronic | 类似代替 |
DO-201AD 600V 3A 1.7V
|
|||
EGP30J
|
Fairchild | 类似代替 | DO-201AD |
DO-201AD 600V 3A 1.7V
|
||
|
EGP30J
|
Taiwan Semiconductor | 类似代替 |
DO-201AD 600V 3A 1.7V
|
|||
SF38
|
Taiwan Semiconductor | 完全替代 | DO-201AD-2 |
3A 至 4A，Taiwan Semiconductor ### 二极管和整流器，Taiwan Semiconductor
|
||
|
SF38
|
SynSemi | 完全替代 |
3A 至 4A，Taiwan Semiconductor ### 二极管和整流器，Taiwan Semiconductor
|
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