Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 15 V
Technical parameters/Continuous drain current (Ids): 0.05A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: PDIP
External dimensions/packaging: PDIP
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
|
|||
SD-50
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CUI | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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SD5000N
|
Linear Technology | 功能相似 |
Trans MOSFET N-CH 20V 0.05A 16Pin PDIP
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