Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 2.3 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 1.4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 200A
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 6620pF @30V(Vds)
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.67 mm
External dimensions/width: 4.7 mm
External dimensions/height: 16.51 mm
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Supply in progress
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
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