Technical parameters/rated voltage (DC): 36.0 V
Technical parameters/rated current: 12.0 A
Technical parameters/polarity: NPN
Technical parameters/output power: 70.0 W
Technical parameters/breakdown voltage (collector emitter): 18 V
Technical parameters/gain: 10 dB
Technical parameters/minimum current amplification factor (hFE): 10 @5A, 5V
Technical parameters/rated power (Max): 183 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 183000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: M-113
External dimensions/packaging: M-113
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
VLB70-12F
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, Very High Frequency Band, Silicon, NPN, 0.38INCH, FM-4
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review