Technical parameters/rated voltage (DC): 36.0 V
Technical parameters/rated current: 8.00 A
Technical parameters/dissipated power: 70 W
Technical parameters/breakdown voltage (collector emitter): 16 V
Technical parameters/gain: 10 dB
Technical parameters/minimum current amplification factor (hFE): 20 @250mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 20 @250mA, 5V
Technical parameters/rated power (Max): 70 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 70000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: M-135
External dimensions/length: 9.78 mm
External dimensions/width: 9.78 mm
External dimensions/height: 19.05 mm
External dimensions/packaging: M-135
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6081
|
Microsemi | 功能相似 |
射频与微波晶体管130 ... 230兆赫调频模块应用 RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS
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