Technical parameters/forward voltage: 1.55V @10A
Technical parameters/dissipated power: 75 W
Technical parameters/thermal resistance: 1.9℃/W (RθJC)
Technical parameters/reverse recovery time: 0 ns
Technical parameters/forward current: 10 A
Technical parameters/forward voltage (Max): 1.55V @10A
Technical parameters/forward current (Max): 10 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: 175℃ (Max)
Technical parameters/working junction temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/length: 9.8 mm
External dimensions/width: 4.45 mm
External dimensions/height: 15.37 mm
External dimensions/packaging: TO-220-2
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SCS210AGC
|
ROHM Semiconductor | 类似代替 | TO-220-2 |
SiC 肖特基势垒二极管，ROHM Silicon Carbide (SiC) 肖特基势垒二极管的总电容电荷较小，可减少切换损耗，实现高速切换操作。
|
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