Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 10 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 120
Technical parameters/Maximum current amplification factor (hFE): 390
Technical parameters/rated power (Max): 10 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 5.5 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
ROHM Semiconductor | 功能相似 |
10000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
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2SC5001TLQ
|
ROHM Semiconductor | 类似代替 | TO-252-3 |
2SC5001 系列 20 V 10 A 表面贴装 NPN 低VCE(sat) 晶体管 - CPT-3
|
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