Technical parameters/rated voltage (DC): 10.0 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 10 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 300 @500mA, 1V
Technical parameters/rated power (Max): 900 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSC5019NTA
|
ON Semiconductor | 功能相似 | TO-226-3,TO-92-3(TO-226AA)成形引线 |
Trans GP BJT NPN 10V 2A 3Pin TO-92 Ammo
|
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