Technical parameters/forward voltage: 600mV @10A
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 250 A
Technical parameters/forward voltage (Max): 600mV @10A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): 40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.54 mm
External dimensions/width: 4.7 mm
External dimensions/height: 8.89 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 40℃ ~ 125℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SBL1030
|
Galaxy Semi-Conductor | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC,
|
|||
SBL1030
|
Diodes | 功能相似 | TO-220-2 |
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC,
|
||
SBL1030-E3/45
|
Vishay Semiconductor | 完全替代 | TO-220-3 |
肖特基势垒整流器 Schottky Barrier Rectifier
|
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