Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1500 mW
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1.5A
Technical parameters/minimum current amplification factor (hFE): 63 @150mA, 2V
Technical parameters/rated power (Max): 1.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223-4
External dimensions/packaging: SOT-223-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP53-10T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
PNP 晶体管,超过 1A,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。
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