Technical parameters/forward voltage: 800mV @1A
Technical parameters/thermal resistance: 50℃/W (RθJA)
Technical parameters/Maximum forward surge current (Ifsm): 25 A
Technical parameters/forward voltage (Max): 800mV @1A
Technical parameters/forward current (Max): 1 A
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/length: 5.21 mm
External dimensions/width: 2.72 mm
External dimensions/height: 2.72 mm
External dimensions/packaging: DO-41
Physical parameters/operating temperature: -65℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SB170-T
|
Diodes | 完全替代 | DO-41 |
肖特基二极管与整流器 1.0A 70V
|
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SB180
|
Transys Electronics | 功能相似 |
FAIRCHILD SEMICONDUCTOR SB180 肖特基整流器, 单, 80 V, 1 A, DO-41, 2 引脚, 850 mV
|
|||
|
SB180
|
DIYI Electronic | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR SB180 肖特基整流器, 单, 80 V, 1 A, DO-41, 2 引脚, 850 mV
|
||
|
|
Continental Device | 功能相似 |
FAIRCHILD SEMICONDUCTOR SB180 肖特基整流器, 单, 80 V, 1 A, DO-41, 2 引脚, 850 mV
|
|||
|
|
Gulf Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR SB180 肖特基整流器, 单, 80 V, 1 A, DO-41, 2 引脚, 850 mV
|
|||
|
|
Compact | 功能相似 |
FAIRCHILD SEMICONDUCTOR SB180 肖特基整流器, 单, 80 V, 1 A, DO-41, 2 引脚, 850 mV
|
|||
SB180
|
ON Semiconductor | 功能相似 | DO-41 |
FAIRCHILD SEMICONDUCTOR SB180 肖特基整流器, 单, 80 V, 1 A, DO-41, 2 引脚, 850 mV
|
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