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Model 7MBR35SB-120-50
Description IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: FUJI
Packaging MODULE
Delivery time
Packaging method
Standard packaging quantity 1
836.44  yuan 836.44yuan
1+:
$ 953.5370
10+:
$ 920.0796
50+:
$ 915.8974
100+:
$ 911.7152
150+:
$ 905.0238
250+:
$ 899.1687
500+:
$ 893.3136
1000+:
$ 886.6222
Quantity
1+
10+
50+
100+
150+
Price
$953.5370
$920.0796
$915.8974
$911.7152
$905.0238
Price $ 953.5370 $ 920.0796 $ 915.8974 $ 911.7152 $ 905.0238
Start batch production 1+ 10+ 50+ 100+ 150+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4069) Minimum order quantity(1)
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Technical parameters/number of pins: 24

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 240 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/dissipated power (Max): 240 W

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 24

Encapsulation parameters/Encapsulation: Module

External dimensions/length: 122 mm

External dimensions/width: 62 mm

External dimensions/height: 17 mm

External dimensions/packaging: Module

Compliant with standards/RoHS standards: RoHS Compliant

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