Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 600mA
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC817-40LT3G
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ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC817-40LT3G Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 225 mW, 500 mA, 40 hFE 新
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Continental Device | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
|
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BSR14
|
ROHM Semiconductor | 功能相似 | SOT-23 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
|
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BSR14
|
Kexin | 功能相似 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
|
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BSR14
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor BSR14 , NPN 晶体管, 800mA, Vce=40 V, HFE:35, 300 MHz, 3引脚 SOT-23封装
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