Technical parameters/frequency: 28 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 2 W
Technical parameters/breakdown voltage (collector emitter): 600 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SA1413-Z
|
Kexin | 完全替代 |
硅功率晶体管 SILICON POWER TRANSISTOR
|
|||
2SA1413-Z
|
NEC | 完全替代 |
硅功率晶体管 SILICON POWER TRANSISTOR
|
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