Technical parameters/frequency: 200 MHz
Technical parameters/rated voltage (DC): -30.0 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.15 W
Technical parameters/gain bandwidth product: 200 MHz
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 120 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 240
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSA1182-Y
|
Fairchild | 功能相似 | SOT-23 |
KSA1182-Y PNP三极管 -35V -500mA/-0.5A 200MHz 120~240 -250mV/-0.25V SOT-23/SC-59 marking/标记 F1Y 低频功率放大器
|
||
KSA1182YMTF
|
Rochester | 类似代替 | SOT-23 |
集成电路
|
||
KSA1182YMTF
|
Fairchild | 类似代替 | SOT-23-3 |
集成电路
|
||
KSA1182YMTF_NL
|
Fairchild | 功能相似 | SOT-23 |
PNP Epitaxial Silicon Transistor
|
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