Technical parameters/rise/fall time: 50 ns
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.56 V
Technical parameters/dissipated power: 300 mW
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 25 mA
Technical parameters/forward voltage (Max): 1.8 V
Technical parameters/forward current (Max): 25 mA
Technical parameters/descent time (Max): 50 ns
Technical parameters/rise time (Max): 50 ns
Technical parameters/operating temperature (Max): 110 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 300 mW
Technical parameters/power supply voltage: 15V ~ 30V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/packaging: DIP-8
Physical parameters/operating temperature: -40℃ ~ 110℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Renesas Electronics | 类似代替 | DIP-8 |
高速光耦合器 1GBTGate Couplr VDE
|
||
PS9552-V-AX
|
California Eastern Laboratories | 类似代替 | DIP-8 |
高速光耦合器 1GBTGate Couplr VDE
|
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