Technical parameters/forward voltage: 1.1V @4A
Technical parameters/reverse recovery time: 2.5 µs
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-277-3
External dimensions/packaging: TO-277-3
Other/Product Lifecycle: Not Recommended for New Design
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S4PGHM3/86A
|
Vishay Semiconductor | 类似代替 | PowerDFN-3 |
DIODE GEN PURP 400V 4A TO277A
|
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