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Model BFS 483 E6327
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) NPN Silicon RF Transistor
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Brand: Infineon
Packaging SOT-363-6
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6029) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 12.0 V

Technical parameters/rated current: 65.0 mA

Technical parameters/dissipated power: 450 mW

Technical parameters/breakdown voltage (collector emitter): 12 V

Technical parameters/gain: 19 dB

Technical parameters/minimum current amplification factor (hFE): 70 @15mA, 8V

Technical parameters/rated power (Max): 450 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SOT-363-6

External dimensions/length: 2 mm

External dimensions/width: 1.25 mm

External dimensions/height: 0.9 mm

External dimensions/packaging: SOT-363-6

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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