Technical parameters/forward voltage: 1.2V @3A
Technical parameters/dissipated power: 2.6 W
Technical parameters/thermal resistance: 13℃/W (RθJL)
Technical parameters/reverse recovery time: 2.5 µs
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/forward voltage (Max): 1.2 V
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/length: 7.15 mm
External dimensions/width: 6.25 mm
External dimensions/height: 2.75 mm
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S3N
|
ON Semiconductor | 功能相似 | DO-214AB |
FAIRCHILD SEMICONDUCTOR S3N 标准功率二极管, 单, 1.2 kV, 3 A, 1.2 V, 2.5 µs, 100 A
|
||
S3N
|
Fairchild | 功能相似 | DO-214AB |
FAIRCHILD SEMICONDUCTOR S3N 标准功率二极管, 单, 1.2 kV, 3 A, 1.2 V, 2.5 µs, 100 A
|
||
STTH212S
|
ST Microelectronics | 功能相似 | DO-214AB |
STMICROELECTRONICS STTH212S 快速/超快功率二极管, 单, 1.2 kV, 2 A, 1.75 V, 75 ns, 40 A
|
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