Technical parameters/number of pins: 2
Technical parameters/forward voltage: 1.3 V
Technical parameters/thermal resistance: 15℃/W (RθJL)
Technical parameters/reverse recovery time: 250 ns
Technical parameters/Maximum reverse voltage (Vrrm): 600 V
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/maximum reverse leakage current (Ir): 10 uA
Technical parameters/forward voltage (Max): 1.3 V
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB-2
External dimensions/length: 7.11 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.42 mm
External dimensions/packaging: DO-214AB-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 850
Other/Manufacturing Applications: Communication and networking, power management, consumer electronics, industrial, automotive
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MURS360BT3G
|
ON Semiconductor | 功能相似 | DO-214AA |
ON SEMICONDUCTOR MURS360BT3G. 超快二极管, 3A, 600V, 403A
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RS3J-E3/57T
|
Vishay Siliconix | 功能相似 |
VISHAY RS3J-E3/57T 标准功率二极管, 单, 600 V, 3 A, 1.3 V, 250 ns, 100 A
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RS3J-E3/57T
|
Vishay Semiconductor | 功能相似 | DO-214AB-2 |
VISHAY RS3J-E3/57T 标准功率二极管, 单, 600 V, 3 A, 1.3 V, 250 ns, 100 A
|
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RS3J-E3/57T
|
VISHAY | 功能相似 | DO-214AB-2 |
VISHAY RS3J-E3/57T 标准功率二极管, 单, 600 V, 3 A, 1.3 V, 250 ns, 100 A
|
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STTH3R06S
|
ST Microelectronics | 功能相似 | DO-214AB |
STMICROELECTRONICS STTH3R06S 快速/超快二极管, 单, 600 V, 3 A, 1.7 V, 35 ns, 45 A
|
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