Technical parameters/rated power: 0.43 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 150 @100mA, 2V
Technical parameters/rated power (Max): 430 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 430 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-883
External dimensions/packaging: SOT-883
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | SMPAK-3 |
双极晶体管 - 双极结型晶体管(BJT) LOW VCESAT (BLISS)
|
||
PBSS3540E,115
|
NXP | 功能相似 | SOT-416 |
双极晶体管 - 双极结型晶体管(BJT) LOW VCESAT (BLISS)
|
||
PBSS3540M
|
NXP | 功能相似 | DFN |
Small Signal Bipolar Transistor
|
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