Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 7.60 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 22 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 1.80 nF
Technical parameters/gate charge: 34.0 nC
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.60 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1800pF @25V(Vds)
Technical parameters/rated power (Max): 1 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.575 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS3580
|
Fairchild | 功能相似 | SOIC-8 |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDS3580, 7.6 A, Vds=80 V, 8引脚 SOIC封装
|
||
NTMS4503NR2
|
ON Semiconductor | 功能相似 | SOIC-8 |
功率MOSFET Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review