Technical parameters/forward voltage: 0.89 V
Technical parameters/reverse recovery time: 35 ns
Technical parameters/Maximum reverse voltage (Vrrm): 200 V
Technical parameters/forward current: 3 A
Technical parameters/Maximum forward surge current (Ifsm): 125 A
Technical parameters/maximum reverse leakage current (Ir): 5 uA
Technical parameters/forward voltage (Max): 710 mV
Technical parameters/forward current (Max): 4 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AB
External dimensions/length: 7.11 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.42 mm
External dimensions/packaging: DO-214AB
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 850
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MURS320T3G
|
ON Semiconductor | 功能相似 | DO-214AB |
ON SEMICONDUCTOR MURS320T3G 快速/超快二极管, 单, 200 V, 3 A, 890 mV, 35 ns, 100 A
|
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