Technical parameters/forward voltage: 1.15V @2A
Technical parameters/forward current (Max): 1.5 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-214AA
External dimensions/packaging: DO-214AA
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S2J
|
FCI Electronics | 完全替代 |
DIODE GEN PURP 600V 2A DO214AA
|
|||
S2J
|
Semikron | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
S2J
|
Luguang Electronic | 完全替代 |
DIODE GEN PURP 600V 2A DO214AA
|
|||
S2J
|
Panjit | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
S2J
|
VISHAY | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
S2J
|
Taiwan Semiconductor | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
S2J
|
Vishay Semiconductor | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
|
|
SMC Diode Solutions | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
|
|
SMC | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
S2J
|
Fairchild | 完全替代 | DO-214AA |
DIODE GEN PURP 600V 2A DO214AA
|
||
S2J-E3
|
VISHAY | 类似代替 |
1.5A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 薄型,高度为 1mm 雪崩整流器
|
|||
S2J-E3
|
Vishay Semiconductor | 类似代替 | DO-214AA |
1.5A,Vishay Semiconductor 采用工业标准封装类型的多用途、高效标准恢复功率二极管。 薄型,高度为 1mm 雪崩整流器
|
||
S2J-TP
|
Micro Commercial Components | 类似代替 | DO-214AA |
整流器 600V 2A
|
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