Technical parameters/digits: 16
Technical parameters/access time (Max): 120 ns
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 1.65V ~ 3.6V
Package parameters/number of pins: 64
Encapsulation parameters/Encapsulation: FBGA-64
External dimensions/packaging: FBGA-64
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
S29GL01GS11DHI010
|
Spansion | 功能相似 | FBGA-64 |
闪存, 或非, 并行NOR, 1 Gbit, 64M x 16位, 并行, FBGA, 64 引脚
|
||
S29GL01GS11DHI010
|
Cypress Semiconductor | 功能相似 | FBGA-64 |
闪存, 或非, 并行NOR, 1 Gbit, 64M x 16位, 并行, FBGA, 64 引脚
|
||
S29GL01GS11DHI020
|
Spansion | 功能相似 | FBGA-64 |
闪存, 或非, 并行NOR, 1 Gbit, 64M x 16位, 并行, FBGA, 64 引脚
|
||
S29GL01GS11DHIV10
|
Cypress Semiconductor | 功能相似 | FBGA-64 |
闪存, 或非, 并行NOR, 1 Gbit, 64M x 16位, 并行, FBGA, 64 引脚
|
||
S29GL01GS12DHIV20
|
Cypress Semiconductor | 完全替代 | FBGA-64 |
NOR闪存 1G 3V 120ns Parallel NOR闪存
|
||
S29GL01GS12DHIV20
|
Spansion | 完全替代 | FBGA-64 |
NOR闪存 1G 3V 120ns Parallel NOR闪存
|
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