Technical parameters/frequency: 450 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 2V
Technical parameters/rated power (Max): 250 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/packaging: SOT-416
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Consumer Electronics, Industrial, Motor Drive & Control
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 类似代替 | SC-75 |
40 V ， 500毫安NPN低VCEsat晶体管（ BISS ）晶体管 40 V, 500 mA NPN low VCEsat (BISS) transistor
|
||
PBSS2540E,115
|
NXP | 类似代替 | SOT-416 |
单晶体管 双极, NPN, 40 V, 450 MHz, 150 mW, 500 mA, 200 hFE
|
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