Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 100 GHz
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 2000000 B
Technical parameters/power supply voltage: 3V ~ 3.6V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 40
Encapsulation parameters/Encapsulation: DIP-40
External dimensions/packaging: DIP-40
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 功能相似 | DIP-40 |
IC NVSRAM 2Mbit 100NS 40EDIP
|
||
|
|
Dallas Semiconductor | 功能相似 | DIP |
IC NVSRAM 2Mbit 100NS 40EDIP
|
||
DS1258Y-100
|
Maxim Integrated | 功能相似 | DIP-40 |
128K x 16 Nonvolatile SRAM
|
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