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Other/Gate Voltage Vgs: 2.5V@1mA
Other/Vgs (maximum value): ±20V
Other/continuous drain current Id: 7A(Ta)
Other/drain source voltage Vds: 30V
Other/Gate Charge Qg: 5.8nC@5V
Other/RdsOn (Max) @ Id, Vgs: 28mOhms@7A,10V
Other/working temperature: 150℃(TJ)
Other/Packaging/Shell: 8-SOIC
Other/FET types: N-Channel
Other/Pd - power dissipation (Max): 1.4W(Ta)
Compliant with standards/RoHS standards: RoHS Compliant
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