Technical parameters/rated voltage (DC): 350 V
Technical parameters/rated current: 10.0 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 W
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 500 @5A, 4.6V
Technical parameters/Maximum current amplification factor (hFE): 3400
Technical parameters/rated power (Max): 150 W
Technical parameters/DC current gain (hFE): 3
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.29 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUB323Z
|
ON Semiconductor | 类似代替 | TO-263-3 |
NPN硅达林顿功率 NPN Silicon Power Darlington
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review