Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -200 mA
Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/Continuous drain current (Ids): 250 mA
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 50pF @10V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-323-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
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