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Encapsulation parameters/Encapsulation: TSMT3
External dimensions/packaging: TSMT3
Other/Gate Voltage Vgs: ±12V
Other/Rds On (Max) @ Id, Vgs: 48mΩ@4A,4.5V
Other/continuous drain current Id: 4A(Ta)
Other/drain source voltage Vds: 30V
Other/Gate Charge Qg: 8.3nC@4.5V
Other/working temperature: 150℃(TJ)
Other/Packaging/Shell: SC-96
Other/FET types: N-Channel
Other/Pd - power dissipation (Max): 700mW(Ta)
Compliant with standards/RoHS standards: RoHS Compliant
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