Encapsulation parameters/Encapsulation: TSMT3
External dimensions/packaging: TSMT3
Other/Gate Voltage Vgs: 1.5V@1mA
Other/Vgs (maximum value): ±12V
Other/continuous drain current Id: 2A(Ta)
Other/drain source voltage Vds: 45V
Other/Gate Charge Qg: 4.1nC@4.5V
Other/RdsOn (Max) @ Id, Vgs: 180mOhms@2A,4.5V
Other/working temperature: 150℃(TJ)
Other/Packaging/Shell: SC-96
Other/FET types: N-Channel
Other/Pd - power dissipation (Max): 700mW(Ta)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review