Technical parameters/drain source resistance: 7.3 mΩ
Technical parameters/dissipated power: 2 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Input capacitance (Ciss): 8000pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 650mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOP-8
External dimensions/packaging: SOP-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RRH140P03GZETB
|
ROHM Semiconductor | 类似代替 | SOP-8 |
晶体管, MOSFET, P沟道, -14 A, -30 V, 0.005 ohm, -10 V, -2.5 V
|
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