Technical parameters/tolerances: ±0.1 %
Technical parameters/rated power: 0.1 W
Technical parameters/resistance: 100 kΩ
Technical parameters/resistance deviation: ±0.1 %
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 200 V
Encapsulation parameters/Encapsulation: B14
External dimensions/length: 7.37 mm
External dimensions/packaging: B14
Physical parameters/temperature coefficient: ±50 ppm/℃
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Vishay Semiconductor | 功能相似 |
Res Metal Film 100KΩ 0.1% 0.1W(1/10W) ±50ppm/℃ Conformal AXL Thru-Hole T/R
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Vishay Dale | 功能相似 |
Res Metal Film 100KΩ 0.1% 0.1W(1/10W) ±50ppm/℃ Conformal AXL Thru-Hole T/R
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Vishay Intertechnology | 功能相似 |
Resistor, Metal Film, 100KΩ, 200WV, .1+/-% Tol, -50, 50ppm-TC, RN55-MilStyle
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RN55C1003BRE6
|
VISHAY | 功能相似 | Axial |
Resistor, Metal Film, 100KΩ, 200WV, .1+/-% Tol, -50, 50ppm-TC, RN55-MilStyle
|
||
RN55C1003BRE6
|
Vishay Semiconductor | 功能相似 |
Resistor, Metal Film, 100KΩ, 200WV, .1+/-% Tol, -50, 50ppm-TC, RN55-MilStyle
|
|||
RN55C1003FB14
|
Vishay Semiconductor | 类似代替 | Axial Leaded |
VISHAY RN55C1003FB14 金属膜电阻, 100KΩ, 100mW, 1%
|
||
RN55C1003FB14
|
Vishay Dale | 类似代替 |
VISHAY RN55C1003FB14 金属膜电阻, 100KΩ, 100mW, 1%
|
|||
RN55C1003FB14
|
VISHAY | 类似代替 | B14 |
VISHAY RN55C1003FB14 金属膜电阻, 100KΩ, 100mW, 1%
|
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