Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCR148S
|
Infineon | 类似代替 | SOT-363 |
NPN硅晶体管数字 NPN Silicon Digital Transistor
|
||
PUMH2
|
Philips | 类似代替 | SOT-363 |
NXP PUMH2 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 80 hFE, SOT-363
|
||
PUMH2
|
Nexperia | 类似代替 | UMT |
NXP PUMH2 双极晶体管阵列, NPN, 50 V, 200 mW, 100 mA, 80 hFE, SOT-363
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review