Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 2.8 mΩ
Technical parameters/dissipated power: 3 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/rise time: 81 ns
Technical parameters/Input capacitance (Ciss): 3130pF @15V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RS1E280GNTB
|
ROHM Semiconductor | 功能相似 | HSOP-8 |
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.002 ohm, 10 V, 2.5 V
|
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