Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 2.50 A
Technical parameters/rated power: 1.3 W
Technical parameters/number of pins: 4
Technical parameters/drain source resistance: 0.1 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.3 W
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 870pF @25V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 2.50 A
Technical parameters/rise time: 110 ns
Technical parameters/Input capacitance (Ciss): 870pF @25V(Vds)
Technical parameters/descent time: 41 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.3 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/length: 6.29 mm
External dimensions/width: 6.29 mm
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLD024
|
IRF | 完全替代 |
MOSFET N-CH 60V 2.5A 4-DIP
|
|||
IRLD024
|
VISHAY | 完全替代 | DIP-4 |
MOSFET N-CH 60V 2.5A 4-DIP
|
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