Technical parameters/forward voltage: 3.2 V
Technical parameters/thermal resistance: 1.2℃/W (RθJC)
Technical parameters/reverse recovery time: 85 ns
Technical parameters/forward current: 30000 mA
Technical parameters/Maximum forward surge current (Ifsm): 300 A
Technical parameters/forward voltage (Max): 3.2 V
Technical parameters/forward current (Max): 30 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 125000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220-2
External dimensions/length: 10.67 mm
External dimensions/width: 4.83 mm
External dimensions/height: 9.65 mm
External dimensions/packaging: TO-220-2
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RHRP30120
|
Intersil | 功能相似 |
30A , 1200V超高速二极管 30A, 1200V Hyperfast Diode
|
|||
RHRP30120
|
ON Semiconductor | 功能相似 | TO-220-2 |
30A , 1200V超高速二极管 30A, 1200V Hyperfast Diode
|
||
RHRP30120_NL
|
Fairchild | 功能相似 |
30A, 1200V HyperFast Diode
|
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