Technical parameters/dissipated power: 110W (Tc)
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/rise time: 50 ns
Technical parameters/descent time: 15 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFP50N05L
|
Freescale | 功能相似 |
50A ， 50V ， 0.022欧姆，逻辑电平， N沟道功率MOSFET 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
|
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|
Intersil | 功能相似 |
50A ， 50V ， 0.022欧姆，逻辑电平， N沟道功率MOSFET 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
|
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RFP50N05L
|
Fairchild | 功能相似 | TO-220-3 |
50A ， 50V ， 0.022欧姆，逻辑电平， N沟道功率MOSFET 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
|
||
RFP50N05L
|
ON Semiconductor | 功能相似 | TO-220-3 |
50A ， 50V ， 0.022欧姆，逻辑电平， N沟道功率MOSFET 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
|
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