Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 14.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 48.0 W
Technical parameters/drain source voltage (Vds): 50.0 V
Technical parameters/Continuous drain current (Ids): 14.0 A
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1404PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF1404PBF 晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
|
||
IRF1404PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF1404PBF 晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
|
||
|
|
IRF | 功能相似 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
|||
IRF2804PBF
|
Infineon | 功能相似 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF2804PBF
|
International Rectifier | 功能相似 | TO-220-3 |
INFINEON IRF2804PBF 晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
|
||
IRF3710PBF
|
International | 功能相似 | Through Hole |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
||
IRF3710PBF
|
IFC | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
IRF3710PBF
|
IFA | 功能相似 |
INFINEON IRF3710PBF 晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
|
|||
MTD10N05E
|
Motorola | 功能相似 |
TMOS4 POWER FIELD EFFECT TRANSISTOR
|
|||
|
|
Harris | 功能相似 |
14A , 50V , 0.100 Ohm的N通道功率MOSFET 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
|
|||
|
|
ON Semiconductor | 功能相似 | DPAK-252 |
14A , 50V , 0.100 Ohm的N通道功率MOSFET 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
|
||
RFD14N05SM
|
Intersil | 功能相似 | TO-252 |
14A , 50V , 0.100 Ohm的N通道功率MOSFET 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
|
||
RFD14N05SM9A
|
Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor Si N沟道 MOSFET RFD14N05SM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
|
|
Harris | 功能相似 |
ON Semiconductor Si N沟道 MOSFET RFD14N05SM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
|||
RFD14N05SM9A
|
Rochester | 功能相似 | TO-252 |
ON Semiconductor Si N沟道 MOSFET RFD14N05SM9A, 14 A, Vds=50 V, 3引脚 DPAK (TO-252)封装
|
||
|
|
Freescale | 功能相似 |
N沟道 50V 14A
|
|||
|
|
Fairchild | 功能相似 | DPAK |
N沟道 50V 14A
|
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