Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.0044 Ω
Technical parameters/dissipated power: 3.5 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC
External dimensions/packaging: SOIC
Other/Product Lifecycle: Obsolete
Other/Manufacturing Applications: Computers and computer peripherals, power management, communication and networking, consumer electronics, industrial
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PSMN005-30K,518
|
NXP | 功能相似 | SOIC-8 |
NXP PSMN005-30K,518 MOSFET Transistor, N Channel, 20A, 30V, 4.4mohm, 10V, 3V
|
||
PSMN005-30K/T3
|
NXP | 功能相似 | SO-8 |
MOSFET TAPE13 PWR-MOS
|
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