Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.8 Ω
Technical parameters/dissipated power: 830 mW
Technical parameters/threshold voltage: 2 V
Technical parameters/input capacitance: 25 pF
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 40pF @10V(Vds)
Technical parameters/rated power (Max): 830 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 830mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automation and Process Control, Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBF170
|
NXP | 功能相似 | TO-236 |
N 通道 MOSFET,60V 至 80V,Nexperia ### MOSFET 晶体管,NXP Semiconductors
|
||
PMBF170
|
Nexperia | 功能相似 | TO-236 |
N 通道 MOSFET,60V 至 80V,Nexperia ### MOSFET 晶体管,NXP Semiconductors
|
||
PMBF170,215
|
NXP | 类似代替 | SOT-23-3 |
PMBF 系列 60 V 5 Ohm 0.83 W N-沟道 增强型 晶体管 - SOT-23-3
|
||
PMBF170,215
|
Nexperia | 类似代替 | SOT-23-3 |
PMBF 系列 60 V 5 Ohm 0.83 W N-沟道 增强型 晶体管 - SOT-23-3
|
||
PMBF170,235
|
Nexperia | 类似代替 | SOT-23-3 |
TO-236AB N-CH 60V 0.3A
|
||
PMBF170,235
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB N-CH 60V 0.3A
|
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