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Model PHB20N06T
Description NTrenchMOS standard level FET N-channel TrenchMOS standard level FET
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Brand: NXP
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2802) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 20.3A

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FDB045AN08A0 FDB045AN08A0 Fairchild 功能相似 TO-263-3
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDB045AN08A0, 90 A, Vds=75 V, 3引脚 D2PAK (TO-263)封装
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